INTENSE PHOTOLUMINESCENCE OF Β-GA2O3 ELLIPSOIDS SYNTHESIZED BY REFLUX CONDENSATION: A SYSTEMATIC REVIEW

There is a great interest in the semiconductor metallic oxide nanostructures due to their optoelectronic and electronic properties, which allow them to be applied in several issues, including in the photoluminescence field. One-dimensional nanostructures are desired due to their large surface area, whose oxygen vacancies enable an intense and broad photoluminescence emission spectrum. These defects could be monitored from the morphology, crystallite size, and porosity, factors influenced from the techniques used to synthesize the gallium oxide. Different Ga-O vibrations are come from two types of Ga3+ ions, which occupy octahedral and tetrahedral chains, evidenced from the Gaussian emission band. In this review, the reflux condensation is showed to be a low-costly, versatile, and green technique, responsible for the direct Ga2O3 achievement, and the perspectives of the gallium oxide properties conclude its application as an attractive photoluminescent material.