SYNTHESIS AND CHARACTERIZATION OF NIO FOR APPICATIONS IN PHOTOELECTRONICS DEVICES

In this work, nickel oxide was synthesized by the Sol-Gel process and depositedon glass substrates using spin coating technique. Three different thicknessesof NiO thin films were obtained, 50 nm, 60 nm and 70 nm, which weresubsequently exposed to temperatures of 400°C, 425°C and 450°C for 12 minutes.The characterization was performed by X-ray diffraction and UV-Visspectroscopy. The X-ray analysis shows a small crystalline structure with highpurity of NiO. At increasing temperature, a decrease in absorbance can be observeddue to structural changes. The synthesized NiO thin films presented aband gap energy of approximately 3.8 eV.